MISNAN-a physically based continuous MOSFET model for CAD applications

Author

Boothroyd, A.R. ; Taraswicz, S.W. ; Slaby, Cezary

Volume

10

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1512

Lastpage

1529

Abstract

A circuit-level MOSFET model is presented which is based on the representation of current transport in a sheet channel in terms of the surface potential conditions at the source and drain boundaries. It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFETs. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device

Keywords

carrier mobility; circuit CAD; electronic engineering computing; equivalent circuits; insulated gate field effect transistors; semiconductor device models; CAD applications; MISNAN; carrier mobility; circuit-level MOSFET model; continuous device characteristics; current transport; physical representation; quasi-static charges; saturation region approximation; scalability; sheet channel; surface potential conditions; Analog integrated circuits; Circuit simulation; Digital integrated circuits; Geometry; Integrated circuit modeling; MOSFET circuits; Scalability; Solid modeling; Telecommunications; Voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.103501

Filename

103501