Title :
Mixed particle Monte Carlo method for deep submicron semiconductor device simulator
Author :
Jin, Gyo-Young ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
fDate :
12/1/1991 12:00:00 AM
Abstract :
A particle simulation method is introduced in which two kinds of particle models are used in one device. A conventional Monte Carlo particle model is used in the region where nonstatic effects are evident, and a particle model based on Langevin´s equation is used in the region where the drift-diffusion approximation is valid. In this way it is possible to obtain efficiency and the required physical accuracy in device simulation. For the validity of this scheme, a silicon n+ -n-n+ structure is simulated, and some important results are presented
Keywords :
Monte Carlo methods; digital simulation; electronic engineering computing; semiconductor device models; Langevin´s equation; Monte Carlo method; Si; deep submicron; drift-diffusion approximation; mixed particle method; n+-n-n+ structure; nonstatic effects; particle simulation method; semiconductor device simulator; Bipolar transistors; Electrons; MOSFET circuits; Monte Carlo methods; Poisson equations; Semiconductor devices; Silicon; Ultrafast electronics;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
