DocumentCode :
824973
Title :
An Electro-Thermal Model of Second Breakdown
Author :
Ward, A.L.
Author_Institution :
Harry Diamond Laboratories Adelphi, Maryland 20783
Volume :
23
Issue :
6
fYear :
1976
Firstpage :
1679
Lastpage :
1684
Abstract :
A versatile computer program that includes the basic electronic and thermal processes important in second breakdown is described. Calculations of static and dynamic voltage-current characteristics showed that with increasing current density, regions of single-avalanthe, space-charge-limited, double-avalanche, and negative-differential-resistance current flow can be identified. Analytic expressions for the static characteristic in the three positive resistance regions are presented for several diodes at a few temperatures. Second breakdown voltages of more than double the first breakdown voltage have been computed.
Keywords :
Charge carrier processes; Circuits; Current density; Difference equations; Electric breakdown; Semiconductor diodes; Space charge; Temperature; Thermal conductivity; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1976.4328561
Filename :
4328561
Link To Document :
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