DocumentCode :
824997
Title :
A generalized Scharfetter-Gummel method to eliminate crosswind effects [semiconduction device modeling]
Author :
He, Yie ; Cao, Guoxiang
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Volume :
10
Issue :
12
fYear :
1991
fDate :
12/1/1991 12:00:00 AM
Firstpage :
1579
Lastpage :
1582
Abstract :
A generalized Scharfetter-Gummel discretization method is proposed for semiconductor device modeling. Motivated by the classical Scharfetter-Gummel approach and the SUPG (streamline upwind/Petrov-Galerkin) method, an optimal nonlinear artificial diffusion term is added to the standard Galerkin finite element formula within a weighted residual form to construct the generalized Scharfetter-Gummel method, which exhibits better properties in precluding numerical oscillation and crosswind effects than the classical Scharfetter-Gummel method and the SUPG method. The generalized Scharfetter-Gummel method is more general and applicable to complicated problems
Keywords :
semiconductor device models; crosswind effects elimination; discretization method; generalized Scharfetter-Gummel method; optimal nonlinear artificial diffusion term; semiconductor device modeling; standard Galerkin finite element formula; weighted residual form; Aerodynamics; Electron mobility; Finite element methods; Fluid dynamics; Helium; Microelectronics; Moment methods; Nonlinear equations; Semiconductor device modeling; Stability;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.103508
Filename :
103508
Link To Document :
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