• DocumentCode
    825026
  • Title

    Technique for Selection of Transient Radiation-Hard Junction-Isolated Integrated Circuits

  • Author

    Crowley, J.L. ; Junga, F.A. ; Stultz, T.J.

  • Author_Institution
    Lockheed Palo Alto Research Laboratory Lockheed Missiles and Space Company, Inc. Palo Alto, California 94304
  • Volume
    23
  • Issue
    6
  • fYear
    1976
  • Firstpage
    1703
  • Lastpage
    1708
  • Abstract
    A technique is presented which demonstrates the feasibility of selecting junction-isolated integrated circuits (JI/ICS) for use in transient radiation environments. The procedure guarantees that all PNPN paths within the integrated circuit are identified and describes the methods used to determine whether the paths represent latchup susceptible structures. Two examples of the latchup analysis are given involving an SSI and an LSI bipolar junction-isolated integrated circuit.
  • Keywords
    Charge carrier processes; Circuit testing; Integrated circuit reliability; Ionizing radiation; Laboratories; Large scale integration; Low voltage; Mathematics; Missiles; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1976.4328565
  • Filename
    4328565