DocumentCode
825026
Title
Technique for Selection of Transient Radiation-Hard Junction-Isolated Integrated Circuits
Author
Crowley, J.L. ; Junga, F.A. ; Stultz, T.J.
Author_Institution
Lockheed Palo Alto Research Laboratory Lockheed Missiles and Space Company, Inc. Palo Alto, California 94304
Volume
23
Issue
6
fYear
1976
Firstpage
1703
Lastpage
1708
Abstract
A technique is presented which demonstrates the feasibility of selecting junction-isolated integrated circuits (JI/ICS) for use in transient radiation environments. The procedure guarantees that all PNPN paths within the integrated circuit are identified and describes the methods used to determine whether the paths represent latchup susceptible structures. Two examples of the latchup analysis are given involving an SSI and an LSI bipolar junction-isolated integrated circuit.
Keywords
Charge carrier processes; Circuit testing; Integrated circuit reliability; Ionizing radiation; Laboratories; Large scale integration; Low voltage; Mathematics; Missiles; Thyristors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1976.4328565
Filename
4328565
Link To Document