Abstract :
The 5th International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD V) was held in Annapolis, Maryland, USA from 8th-11th September 2002. The editorial introduces the Special Issue which is based largely on papers presented at this meeting. Since the first conference in this series was held at Lancaster, UK in 1996 there has been tremendous progress in the development of optoelectronic devices operating in the mid-infrared wavelength range. Mid-infrared lasers, light-emitting diodes, detectors, and frequency converters exhibiting improved wavelength agility and spectral purity, higher powers, and higher-temperature operation are poised to enable a number of new applications, with thermal imaging and gas detection or analysis for process control being key examples.
Keywords :
X-ray diffraction; infrared sources; light emitting diodes; optical frequency conversion; photodetectors; photoluminescence; photonic crystals; quantum cascade lasers; semiconductor heterojunctions; semiconductor quantum dots; X-ray diffraction; band-structure modelling; dark current; frequency converters; light-emitting diodes; midinfrared lasers; midinfrared optoelectronics; negative luminescence; photodetectors; photonic crystals; quantum cascade lasers; quantum dash; quantum dot; room temperature operation; semiconductor quantum heterostructures; strain compensation;
