Title :
Thermal characteristics of quantum-cascade lasers by micro-probe optical spectroscopy
Author :
Spagnolo, V. ; Scamarcio, G. ; Marano, D. ; Troccoli, M. ; Capasso, F. ; Gmachl, C. ; Sergent, A.M. ; Hutchinson, A.L. ; Sivco, D.L. ; Cho, A.Y. ; Page, H. ; Becker, C. ; Sirtori, C.
Author_Institution :
Dipt. Interateneo di Fisica di Bari, Italy
Abstract :
The facet temperature profile and the thermal resistance of operating quantum-cascade lasers (QCLs) have been assessed using a microprobe band-to-band photoluminescence technique. Substrate-side and epilayer-side-mounted QCLs based on GaInAs/AlInAs/InP and GaAs/AlGaAs material systems have been compared. The dependence of the thermal resistance on the CW or pulsed injection conditions and its correlation with the output power have been studied. These results were used as inputs for a two-dimensional heat-diffusion model which gives the heat fluxes and the thermal conductivity of the active regions, in order to design QCLs with improved thermal properties.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum cascade lasers; thermal conductivity; thermal diffusion; thermal resistance; thermo-optical effects; GaAs-AlGaAs; GaAs/AlGaAs material systems; GaInAs-AlInAs-InP; GaInAs/AlInAs/InP material systems; band-to-band photoluminescence; continuous-wave conditions; epilayer-side-mounted QCL; facet temperature profile; heat fluxes; microprobe optical spectroscopy; pulsed injection conditions; quantum-cascade lasers; substrate-side QCL; thermal characteristics; thermal conductivity; thermal resistance; two-dimensional heat-diffusion model;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030610
