Title :
InP based quantum dash lasers with 2 μm wavelength
Author :
Rotter, T.J. ; Stintz, A. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
Room temperature operation of a quantum dash-in-a-well (DWELL) laser based on InP at 2.03 μm wavelength has been achieved. An uncoated laser employing five DWELL layers in the active region shows threshold current densities between 540 and 950 A cm-2. Slope efficiencies range from 3.5 to 6.8 %. The internal efficiency was estimated at 52 % and the internal losses at 55 cm-1. This is the longest wavelength reported so far for quantum DWELL lasers.
Keywords :
III-V semiconductors; current density; indium compounds; infrared sources; optical losses; quantum well lasers; 2.03 mum; 20 degC; 3.5 to 6.8 percent; internal efficiency; internal losses; quantum dash-in-a-well laser; room temperature; slope efficiency; threshold current density;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030842
