3.3 μm ´W´ quantum well light emitting diode

Author

Gevaux, D.G. ; Green, A.M. ; Phillips, C.C. ; Vurgaftman, I. ; Bewley, W.W. ; Felix, C.L. ; Meyer, J.R. ; Lee, H. ; Martinelli, R.U.

Author_Institution

Exp. Solid State Group, Imperial Coll., London, UK

Volume

150

Issue

4

fYear

2003

Firstpage

351

Lastpage

355

Abstract

Recent studies suggest that the radiative conversion efficiency of mid-infrared semiconductor devices is limited by non-radiative Auger mechanisms. Band structure engineering techniques, such as the introduction of strain or the use of type-II band offset materials, have been shown to reduce the effect of Auger recombination. Results from light emitting diodes (LEDs) with an active region consisting of ten InAs/GaInSb/InAs/AlGaAsSb type-II ´W´ quantum wells grown by molecular beam epitaxy (MBE) on GaSb substrates are described. At room temperature, the device was characterised by a slope efficiency of 98 μW/A at low currents, which dropped at higher currents due to heating. This corresponded to an internal efficiency of approximately 2.6%.

Keywords

Auger effect; III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; infrared sources; light emitting diodes; molecular beam epitaxial growth; quantum well devices; semiconductor growth; 3.3 mum; Auger recombination; GaSb; GaSb substrates; InAs-GaInSb-InAs-AlGaAsSb; InAs/GalnSb/InAs/AlGaAsSb type-II W quantum wells; MBE; W quantum well light emitting diode; band structure; internal efficiency; light emitting diodes; midinfrared semiconductor devices; molecular beam epitaxy; radiative conversion efficiency; slope efficiency;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030789

Filename

1244992