On-state analytical modeling of IGBTs with local lifetime control

Author

Yuan, Xiaolu ; Udrea, Florin ; Coulbeck, Lee ; Waind, Peter ; Amaratunga, Gehan

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

17

Issue

5

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

815

Lastpage

823

Abstract

A two-dimensional on-state analytical model of the insulated gate bipolar transistor (IGBT) with local lifetime control is developed. The model accounts for the effect of local lifetime killing in particular the effective value of the lifetime and the position of the local lifetime control region on the excess carrier distribution in the IGBT during its on-state operation. It is shown that the local lifetime killing in the vicinity of the anode junction causes a reduction in the anode injection efficiency leading to improved on-state/turn-off behavior. The accuracy of the analytical model is verified through numerical simulations carried out using the MEDICI device simulator.

Keywords

anodes; carrier density; carrier lifetime; electronic engineering computing; insulated gate bipolar transistors; numerical analysis; semiconductor device models; software packages; IGBT 2-D on-state analytical modeling; MEDICI device simulator; anode injection efficiency; anode junction; computer simulation; excess carrier distribution; local lifetime control; local lifetime killing; numerical simulations; on-state/turn-off behavior improvement; Analytical models; Anodes; Current density; Electrons; Insulated gate bipolar transistors; Medical simulation; Numerical simulation; Radiative recombination; Spontaneous emission; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2002.802177

Filename

1035158