Title :
Highly Efficient Three-Way Saturated Doherty Amplifier With Digital Feedback Predistortion
Author :
Moon, Jinyeong ; Kim, Jung-Ho ; Kim, Inna ; Kim, Jung-Ho ; Kim, Bumki
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang
Abstract :
A three-way saturated Doherty power amplifier (S-DPA) based on class-F topology is proposed to improve efficiency at large backed-off output power regions. The high efficiency is demonstrated by implementing the amplifier using Eudyna EGN010MK GaN HEMTs and testing it with a continuous wave (CW) signal and a forward-link wide-band code division multiple access (WCDMA) 1-FA signal at 2.14 GHz. The proposed S-DPA has a power-added efficiency (PAE) of 50% for the CW signal at 10 dB backed-off output power region, while a two-way S-DPA and class-F PA have PAEs of 39% and 25%, respectively. Also, the proposed S-DPA has a PAE of 46.7% for the WCDMA 1-FA signal with peak-to-average power ratio of 10 dB, while the two-way S-DPA and the class-F PA have PAEs of 42.7% and 28.7%, respectively. Moreover, the proposed S-DPA, when linearized by a digital feedback predistorter, delivers an adjacent channel leakage ratio of 49.2 dBc at a 2.5 MHz offset with a PAE of 45.9%.
Keywords :
III-V semiconductors; UHF power amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; wide band gap semiconductors; Eudyna EGN010MK; GaN; HEMT; adjacent channel leakage; class-F topology; continuous wave signal; digital feedback predistortion; frequency 2.14 GHz; saturated Doherty power amplifier; three-way power amplifier; wideband code division multiple access; Broadband amplifiers; Feedback; Gallium nitride; HEMTs; MODFETs; Multiaccess communication; Power amplifiers; Power generation; Predistortion; Topology; Class-F; Doherty power amplifier (DPA); GaN power amplifier; efficiency enhancement technique;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.2001016