Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide $(\hbox {HfO}_{2})$ Film Added o

In this paper, metal-oxide-semiconductor (MOS) capacitors fabricated on p-type silicon substrate with hafnium oxide (HfO₂ ) film added on silicon dioxide (SiO₂) were demonstrated as reliable temperature-detecting devices. The saturation current of MOS (p) capacitor with added HfO₂ film is easy to saturate within 0.5 V. From 40 degC to 90degC, each increase of 10degC almost doubles the saturation current. The C-V curves show that the interface properties of Si/SiO₂ and SiO₂/HfO ₂ are good. It was also shown that these devices are reliable even though they had been electrically stressed at various temperatures (30degC~90degC) for 15 000 s. They have the potential to be integrated into the circuits as temperature detectors in the era of ultralarge-scale-integration technology