Title :
The semiconductor laser linewidth due to the presence of side modes
Author :
Krüger, Udo ; Petermann, Klaus
Author_Institution :
Inst. fuer Hochfrequenztechnik, Tech. Univ. of Berlin, West Germany
Abstract :
The laser linewidth is evaluated by solving the rate equations for a nearly single-mode laser with two modes. The resulting linewidth contribution due to the presence of side modes is introduced by the nonlinear gain in the laser diode. For weak side modes, the linewidth contribution is proportional to the third power of the side mode intensity. A linewidth contribution of about 20 MHz for a side-mode power of 100 mu W has been found experimentally for a 1.3- mu m buried-heterostructure laser.<>
Keywords :
laser beams; laser modes; laser transitions; semiconductor junction lasers; 1.3 micron; 100 muW; 20 MHz; buried-heterostructure laser; laser diode; rate equations; semiconductor laser linewidth; single-mode laser; Charge carrier density; Diode lasers; Equations; Fluctuations; Gain; Laser modes; Photonic integrated circuits; Power lasers; Semiconductor lasers; Spontaneous emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
