Title :
Epitaxial Silicon Semiconductor Detectors Past Developments, Future Prospects
Author_Institution :
University of California, Los Alamos Scientific Laboratory, P. O. Box 1663, Los Alamos, NM 87545
Abstract :
A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.
Keywords :
Conductivity; Detectors; Epitaxial layers; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor impurities; Semiconductor materials; Silicon; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1977.4328649
