• DocumentCode
    825936
  • Title

    An All Epitaxial Silicon Diode Heavy Ion Detector

  • Author

    Gruhn, C.R. ; Goldstone, P.D. ; Jarmie, Nelson

  • Volume
    24
  • Issue
    1
  • fYear
    1977
  • Firstpage
    142
  • Lastpage
    147
  • Abstract
    An all epitaxial silicon diode (ESD) heavy ion detector has been designed, fabricated, and tested. The active area of the detector is 5 cm2 and has a total thickness of 50 ¿. The response of the detector has been studied with fission fragments, alpha particles, oxygen ions, and sulfur ions. A number of advantages in terms of both fabrication and performance are discussed.
  • Keywords
    Detectors; Diodes; Electrostatic discharge; Epitaxial layers; Fabrication; Pulse amplifiers; Pulse measurements; Silicon; Substrates; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1977.4328657
  • Filename
    4328657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=825936