Bulk-barrier and potential-spike height effects on characteristics of npn heterostructural optoelectronic switches

Author

Guo, D.F.

Author_Institution

Dept. of Electron. Eng., Air Force Acad., Kangshan, Taiwan

Volume

153

Issue

2

fYear

2006

fDate

4/10/2006 12:00:00 AM

Firstpage

63

Lastpage

66

Abstract

GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on switching. It is seen that the illumination decreases the switching voltage V_S and increases the switching current I_S in the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS, the V_S and I_S present contrary trends. These characteristics variation differences in the two HSOSs are mainly because of the photogenerated carriers that affect the bulk-barrier and potential-spike heights.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical switches; optoelectronic devices; p-n heterojunctions; semiconductor device measurement; semiconductor switches; AlGaAs-GaAs-InAlGaP; AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switch; GaAs-InGaP; GaAs/InGaP npn heterostructural optoelectronic switch; bulk-barrier effect; photogenerated carrier; potential-spike height effect;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20050043

Filename

1593510