• DocumentCode
    825989
  • Title

    Effect of bias and load on MESFET nonlinear characteristics

  • Author

    Passiopoulos, G. ; Webster, D.R. ; Parker, A.E. ; Haigh, D.G. ; Robertson, I.D.

  • Author_Institution
    Centre for Telecommun. Res., King´´s Coll., London, UK
  • Volume
    32
  • Issue
    8
  • fYear
    1996
  • fDate
    4/11/1996 12:00:00 AM
  • Firstpage
    741
  • Lastpage
    743
  • Abstract
    An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region
  • Keywords
    Schottky gate field effect transistors; intermodulation distortion; semiconductor device models; semiconductor device noise; MESFET; bias; gain; intermodulation distortion; load resistance; low noise region; nonlinear characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960507
  • Filename
    491064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=825989