Title :
Effect of bias and load on MESFET nonlinear characteristics
Author :
Passiopoulos, G. ; Webster, D.R. ; Parker, A.E. ; Haigh, D.G. ; Robertson, I.D.
Author_Institution :
Centre for Telecommun. Res., King´´s Coll., London, UK
fDate :
4/11/1996 12:00:00 AM
Abstract :
An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region
Keywords :
Schottky gate field effect transistors; intermodulation distortion; semiconductor device models; semiconductor device noise; MESFET; bias; gain; intermodulation distortion; load resistance; low noise region; nonlinear characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960507
