DocumentCode :
826089
Title :
Last Metal Copper Metallization for Power Devices
Author :
Robl, Werner ; Melzl, Michael ; Weidgans, Berngard ; Hofmann, Renate ; Stecher, Matthias
Author_Institution :
Infineon Technol. AG, Regensburg
Volume :
21
Issue :
3
fYear :
2008
Firstpage :
358
Lastpage :
362
Abstract :
High current-carrying capacity and low resistivity are key parameters for power devices. In this paper a copper based terminal metallurgy scheme for wire- and wedge-bonding is described, which improves these properties. The method of choice for depositing thick copper wires is pattern plating. However the plating process has to be optimized in order to get a homogeneous thickness distribution. An electroless coating of NiP, Pd and Au on top of the Cu layers is used as bond interface. This process provides high reliable gold-wire and aluminum-wedge bonds.
Keywords :
electroplating; metallisation; aluminum-wedge bonds; bond interface; electroless coating; high current-carrying capacity; homogeneous thickness distribution; metal copper metallization; pattern plating; power devices; reliable gold-wire bonds; terminal metallurgy scheme; wedge-bonding; wire-bonding; Aluminum; Bonding; Conducting materials; Conductivity; Copper; Gold; Metallization; Passivation; Resists; Wiring; Copper; electroless plating; electroplating; texture;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2008.2001210
Filename :
4589046
Link To Document :
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