• DocumentCode
    826370
  • Title

    Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes

  • Author

    Liu, Han-Din ; Guo, Xiangyi ; Mcintosh, Dion ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
  • Volume
    18
  • Issue
    23
  • fYear
    2006
  • Firstpage
    2508
  • Lastpage
    2510
  • Abstract
    We report electrical and electrooptical characteristic of mesa-structure 6H-SiC PIN avalanche photodiodes. At a gain of 1000, the dark current density is 9.2 muA/cm2. The excess noise factor corresponds to a k value of ~0.1. In addition, peak responsivity of 80 mA/W was observed at 290 nm (external quantum efficiency of ~35%)
  • Keywords
    avalanche photodiodes; current density; electro-optical devices; p-i-n photodiodes; photodetectors; semiconductor device noise; silicon compounds; ultraviolet detectors; 290 nm; SiC; dark current density; external quantum efficiency; noise factor; peak responsivity; ultraviolet 6H-SiC PIN avalanche photodiodes; Annealing; Avalanche photodiodes; Dark current; Etching; Fabrication; Fluorescence; Laser excitation; Passivation; Substrates; Thermal conductivity; Avalanche photodiode (APD); impact ionization; photodetector; silicon carbide; ultraviolet (UV);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2006.887211
  • Filename
    4014254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=826370