Title :
Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes
Author :
Liu, Han-Din ; Guo, Xiangyi ; Mcintosh, Dion ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
Abstract :
We report electrical and electrooptical characteristic of mesa-structure 6H-SiC PIN avalanche photodiodes. At a gain of 1000, the dark current density is 9.2 muA/cm2. The excess noise factor corresponds to a k value of ~0.1. In addition, peak responsivity of 80 mA/W was observed at 290 nm (external quantum efficiency of ~35%)
Keywords :
avalanche photodiodes; current density; electro-optical devices; p-i-n photodiodes; photodetectors; semiconductor device noise; silicon compounds; ultraviolet detectors; 290 nm; SiC; dark current density; external quantum efficiency; noise factor; peak responsivity; ultraviolet 6H-SiC PIN avalanche photodiodes; Annealing; Avalanche photodiodes; Dark current; Etching; Fabrication; Fluorescence; Laser excitation; Passivation; Substrates; Thermal conductivity; Avalanche photodiode (APD); impact ionization; photodetector; silicon carbide; ultraviolet (UV);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.887211
