Title :
Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching
Author :
Hsu, Shun-Cheng ; Lee, Chong-Yi ; Hwang, Jung-Min ; Su, Juh-Yuh ; Wuu, Dong-Sing ; Horng, Ray-Hua
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung
Abstract :
We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0deg which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED
Keywords :
III-V semiconductors; etching; gallium compounds; integrated optoelectronics; light emitting diodes; photoelectrochemistry; rough surfaces; 20 mA; GaN; chopped source; electrodeless etching; enhanced light output; light-emitting diodes; photoelectrochemical etching; roughened GaN surface; Gallium nitride; Light emitting diodes; Optical device fabrication; Power generation; Research and development; Rough surfaces; Sputter etching; Surface morphology; Surface roughness; Surface treatment; Gallium nitride (GaN); light extraction; light-emitting diode (LED); photoelectrochemical (PEC);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.886862
