Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

Author

Kim, Jeonghee ; Toledo, Nikholas G. ; Lal, Shalini ; Lu, Jing ; Buehl, Trevor E. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

42

Lastpage

44

Abstract

This letter reports wafer-bonded p-n heterojunction diodes, which consist of GaAs and chemomechanically polished N-polar GaN. The measured I-V and C-V show well-behaved p-n junction characteristics. The built-in voltage extrapolated from the C-V is 0.2 V less than the theoretical, suggesting the existence of interface states. However, this offset is much less than that (1.14 V) reported of wafer-bonded GaAs/Ga-polar GaN p-n diodes. The limited maximum current suggests pinning of the Fermi level at interface traps near the conduction band accessed under forward bias. Yet, this junction shows promise as a collector junction for wafer-bonded devices to achieve higher breakdown voltages.

Keywords

Fermi level; III-V semiconductors; chemical mechanical polishing; conduction bands; electric breakdown; extrapolation; gallium; gallium arsenide; p-n heterojunctions; semiconductor diodes; wafer bonding; wide band gap semiconductors; C-V measurement; Fermi level pinning; GaAs-Ga-GaN; I-V measurement; breakdown voltage; built-in voltage extrapolation; chemomechanically polished N-polar; collector junction; conduction band; forward bias; interface trap state; limited maximum current; p-n junction characteristics; voltage 0.2 V; wafer-bonded p-n heterojunction diode; Gallium arsenide; Gallium nitride; Heterojunctions; Interface states; Wafer bonding; Chemomechanical polishing (CMP); GaAs; N-polar GaN; wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2225137

Filename

6373694