DocumentCode
827196
Title
An integrated equivalent circuit model for relative intensity noise and frequency noise spectrum of a multimode semiconductor laser
Author
Mortazy, Ebrahim ; Ahmadi, Vahid ; Moravvej-Farshi, Mohammad Kazem
Author_Institution
Dept. of Electron. Eng., Tarbiat Modares Univ., Tehran, Iran
Volume
38
Issue
10
fYear
2002
fDate
10/1/2002 12:00:00 AM
Firstpage
1366
Lastpage
1371
Abstract
Relative intensity noise (RIN) and the frequency/phase noise spectrum (FNS) equivalent circuit of a multimode semiconductor laser diode are derived from multimode rate equations with the inclusion of noise Langevin sources. FNS is an important parameter in optical communication systems, and its circuit model is presented, for the first time, in this paper. Both circuit models for RIN and FNS are integrated in one circuit. RIN and FNS are calculated as functions of frequency, output power, and mode number. It is shown that the RIN of the main mode is increased in the multimode lasers with higher mode numbers. Furthermore, we show that RIN and FNS are enhanced for higher output power. The dependency of a multimode laser diode linewidth on output power is also analyzed using the model.
Keywords
equivalent circuits; laser modes; laser noise; optical transmitters; semiconductor device models; semiconductor device noise; semiconductor lasers; spectral line breadth; circuit model; frequency noise spectrum; integrated equivalent circuit model; main mode; mode number; multimode laser diode; multimode laser diode linewidth; multimode rate equations; multimode semiconductor laser; noise Langevin sources; optical communication systems; output power; relative intensity noise; Diode lasers; Equivalent circuits; Frequency; Laser modes; Laser noise; Optical noise; Phase noise; Power generation; Semiconductor device noise; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2002.802975
Filename
1035984
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