DocumentCode :
827217
Title :
Strain-dependence of the gain saturations in InGaAsP/InP quantum-well gain media
Author :
Takahashi, Yutaka ; Kawaguchi, Hitoshi
Author_Institution :
Dept. of Electr. Eng., Yamagata Univ., Yonezawa, Japan
Volume :
38
Issue :
10
fYear :
2002
fDate :
10/1/2002 12:00:00 AM
Firstpage :
1384
Lastpage :
1389
Abstract :
Numerical analyses of polarization-dependent optical gain saturations are given for quantum-well (QW) lasers in the presence of strain in the well regions in order to investigate the strain dependence of polarization-bistable operations. Gain saturation coefficients are obtained from nonlinear susceptibilities calculated in the perturbative analyses of density matrices. Band dispersions and dipole matrix elements, which are put into the density matrices, are calculated by diagonalizing Luttinger´s Hamiltonian, including valence band mixing. The strain induces a change in band dispersions and wavefunctions, leading to strain-dependent saturation coefficients. The self-saturation coefficients and the cross-saturation coefficients (with orthogonal optical polarizations) pertinent to InGaAsP/InP QW vertical-cavity surface-emitting lasers are calculated. We find that the relative magnitudes of self- and cross-saturation coefficients are strongly dependent on the strain; in the presence of compressive strain, the cross-saturation coefficients are larger than the self-saturation in the wide range of the linear gain spectra, especially in the vicinity of the gain peak, indicating that the compressively strained structure is more favorable for the polarization-bistable operations.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; matrix algebra; nonlinear optical susceptibility; optical bistability; optical saturation; quantum well lasers; semiconductor device models; surface emitting lasers; valence bands; InGaAsP-InP; InGaAsP/InP QW vertical-cavity surface-emitting lasers; InGaAsP/InP quantum-well gain media; QW lasers; band dispersions; compressive strain; cross-saturation coefficients; density matrices; diagonalizing Luttinger´s Hamiltonian; dipole matrix elements; gain peak; gain saturation; gain saturation coefficients; linear gain spectra; nonlinear susceptibilities; perturbative analyses; polarization-bistable operations; polarization-dependent optical gain saturations; quantum-well lasers; self-saturation coefficients; strain dependence; strain dependent saturation coefficients; strain-dependence; valence band mixing; wavefunctions; well regions; Capacitive sensors; Indium phosphide; Nonlinear optics; Optical mixing; Optical polarization; Optical saturation; Quantum well lasers; Quantum wells; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2002.802983
Filename :
1035986
Link To Document :
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