AlGaInP-sapphire glue bonded light-emitting diodes

Author

Chang, Shoou-Jinn ; Su, Yan-Kuin ; Yang, Timothy ; Chang, Chih-Sung ; Chen, Tzer-Peng ; Huang, Kuo-Hsin

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

38

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1390

Lastpage

1394

Abstract

A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wafer bonding; 20 mA; 622 nm; Al₂O₃; AlGaInP-GaAs; MOCVD; MQW; current-voltage measurements; electrical properties; emission efficiency; glue bonding; life test; light-emitting diode; luminescence intensity; optical properties; selective wet etching; spin-on-glass method; transparent sapphire substrate; Distributed Bragg reflectors; Gallium arsenide; Light emitting diodes; MOCVD; Photonic band gap; Quantum well devices; Substrates; Voltage; Wafer bonding; Wet etching;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2002.802970

Filename

1035987