Title :
Spatial distribution of the gain and temperature across the flow in a slit-nozzle supersonic chemical oxygen-iodine laser with transonic and supersonic schemes of iodine injection
Author :
Rybalkin, V. ; Katz, A. ; Bruins, E. ; Furman, D. ; Barmashenko, B.D. ; Rosenwaks, S.
Author_Institution :
Dept. of Phys., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
fDate :
10/1/2002 12:00:00 AM
Abstract :
Spatial distributions of the gain and temperature across the flow were studied for transonic and supersonic schemes of the iodine injection in a slit-nozzle supersonic chemical oxygen-iodine laser as a function of the iodine and secondary nitrogen flow rate, jet penetration parameter, and gas pumping rate. The mixing efficiency for supersonic injection of iodine (∼0.85) is much larger than for transonic injection (∼0.5), the maximum values of the gain being ∼0.65%/cm for both injection schemes. Measurements of the gain distribution as a function of the iodine molar flow rate nI2 were carried out. For transonic injection, the optimal value of nI2 at the now centerline is smaller than that at off axis locations. The temperature is distributed homogeneously across the flow, increasing only in the narrow boundary layers near the walls. Opening a leak downstream of the cavity in order to decrease the Mach number results in a much larger mixing efficiency (∼0.8) than for a closed leak.
Keywords :
Mach number; chemical lasers; iodine; jets; nozzles; oxygen; supersonic flow; transonic flow; COIL laser; I; Mach number; O2; O2-I; gas pumping rate; iodine flow rate; jet penetration parameter; jet-type singlet oxygen generator; mixing efficiency; normalized gain; power lasers; secondary nitrogen flow rate; slit-nozzle supersonic scheme; spatial gain distributions; spatial temperature distributions; spin-orbit levels; supersonic iodine injection; transonic iodine injection; Chemical lasers; Coils; Equations; Gain measurement; Helium; Image motion analysis; Laser transitions; Optical resonators; Power lasers; Temperature distribution;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.802966