Title :
Power divider with bandwidth from 14 to 82 GHz in CMOS IC technology
Author :
Trung-Sinh Dang ; Bomson Lee ; Sang-Woong Yoon
Author_Institution :
Dept. of Electron. & Radio Eng., Kyung-Hee Univ., Yongin, South Korea
Abstract :
An on-chip power divider with an extremely wide bandwidth is presented. The power divider was implemented in a TSMC 180 nm RF CMOS process. Measurements showed an absolute bandwidth of 68 GHz from 14 to 82 GHz with a matching condition of <;-10 dB, which was the fractional bandwidth of 141.7%. A very accurate bandwidth analysis using the theory of three coupled lines is provided. An insertion loss of 2.8-10.5 dB was measured across the bandwidth. The core size of the power divider is 0.2 × 0.73 mm.
Keywords :
CMOS integrated circuits; coupled circuits; microwave integrated circuits; millimetre wave integrated circuits; power dividers; CMOS IC technology; TSMC RF CMOS process; bandwidth 14 GHz to 82 GHz; coupled line; loss 2.8 dB to 10.5 dB; on-chip power divider; size 180 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.0528
