Title :
16 GHz bandwidth MSM photodetector and 45/85 GHz fT/f max HEMT prepared on an identical InGaAs/InP layer structure
Author :
Horstmann, M. ; Schimpf, K. ; Marso, M. ; Fox, A. ; Kordos, P.
Author_Institution :
Inst. of Thin Film & Ion Technol., Res. Centre Julich
fDate :
4/11/1996 12:00:00 AM
Abstract :
An MSM photodetector and a HEMT prepared on an identical InGaAs/InP layer structure are demonstrated for the first time. A 150 nm undoped InGaAs layer is inserted above the 2 DEG to enhance the photodetector responsivity, and a bandwidth of 16 GHz is achieved. On the same wafer, processed HEMTs show optimal high frequency performance with an fT of 45 GHz and an fmax of 85 GHz. This procedure could be suitable for the preparation of monolithically integrated photoreceivers with high performance and low cost
Keywords :
gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; p-i-n photodiodes; photodetectors; two-dimensional electron gas; 16 GHz; 2 DEG; 45 GHz; 85 GHz; HEMT; InGaAs-InP; MSM photodetector; OEIC; photodetector responsivity; undoped InGaAs layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960454
