• DocumentCode
    827381
  • Title

    Fabrication and High-Temperature Characteristics of Ion-Implanted GaAs Bipolar Transistors and Ring-Oscillators

  • Author

    Doerbeck, Friedrich H. ; Duncan, Walter M. ; Mclevige, William V. ; Yuan, Han-tzong

  • Author_Institution
    Texas Instruments Incorporated, P. O. Box 225936, Dallas, TX 75265.
  • Issue
    2
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    136
  • Lastpage
    139
  • Abstract
    GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs circuits fail at approximately 390°C due to the metallization technology.
  • Keywords
    Bipolar transistors; Circuit testing; Electron mobility; Fabrication; Gallium arsenide; Ion implantation; Leakage current; Photonic band gap; Semiconductor materials; Temperature;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0046
  • Type

    jour

  • DOI
    10.1109/TIE.1982.356650
  • Filename
    4180379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=827381