Title :
Potential chirpless DFB laser for InGaAs/InGaAsP compressive-strained quantum wells using modulation doping
Author :
Yamanaka, Takayuki ; Yoshikuni, Yuzo ; Lui, Wayne ; Yokoyama, Kiyoyuki ; Seki, Shunji
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
Abstract :
The effects of detuning on the linewidth enhancement factor alpha are theoretically investigated for InGaAs/InGaAsP compressive-strained QW lasers. The relationship among the material gain, the Kramers-Kronig transformed differential gain, and the linewidth enhancement factor is calculated taking into account the effect of compressive strain on the valence subband structure and of p-type modulation doping. It is shown that compressive strain and/or p-type doping significantly reduces the alpha factor. It is also demonstrated that chirpless operation wherein alpha =0 can be achieved in a modulation-doped compressive-strained structure by using detuning.<>
Keywords :
III-V semiconductors; Kramers-Kronig relations; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser theory; optical modulation; semiconductor lasers; spectral line breadth; InGaAs-InGaAsP; Kramers-Kronig transformed differential gain; QW lasers; chirpless DFB laser; compressive-strained quantum wells; detuning; laser tuning; linewidth enhancement factor; material gain; modulation doping; p-type modulation doping; semiconductors; valence subband structure; Capacitive sensors; Chirp modulation; Electrons; Epitaxial layers; Indium gallium arsenide; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission;
Journal_Title :
Photonics Technology Letters, IEEE
