DocumentCode
827563
Title
Temperature dependence of GaAs/AlGaAs multiquantum barrier lasers
Author
Takagi, Takeshi ; Iga, Kenichi
Author_Institution
OMRON Corp., Kyoto, Japan
Volume
4
Issue
12
fYear
1992
Firstpage
1322
Lastpage
1324
Abstract
A GaAs/AlGaAs laser loaded by a multiquantum barrier (MQB) is reported, and its temperature-threshold characteristic has been systematically examined. It has been found that this characteristic is improved by introducing the MQB, and this improvement is reflected in the barrier height. The actual barrier heights of a MQB-loaded structure under biased conditions are also discussed, considering the Fermi level in the MQB region.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; Fermi level; GaAs-AlGaAs; MQB-loaded structure; SQW; actual barrier heights; barrier height; biased conditions; multiquantum barrier lasers; semiconductor quantum well lasers; temperature dependence; temperature-threshold characteristic; Carrier confinement; DH-HEMTs; Gallium arsenide; Interference; Laser theory; Molecular beam epitaxial growth; Optical materials; Optical reflection; Temperature dependence; Threshold current;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.180563
Filename
180563
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