Title :
Temperature dependence of GaAs/AlGaAs multiquantum barrier lasers
Author :
Takagi, Takeshi ; Iga, Kenichi
Author_Institution :
OMRON Corp., Kyoto, Japan
Abstract :
A GaAs/AlGaAs laser loaded by a multiquantum barrier (MQB) is reported, and its temperature-threshold characteristic has been systematically examined. It has been found that this characteristic is improved by introducing the MQB, and this improvement is reflected in the barrier height. The actual barrier heights of a MQB-loaded structure under biased conditions are also discussed, considering the Fermi level in the MQB region.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; Fermi level; GaAs-AlGaAs; MQB-loaded structure; SQW; actual barrier heights; barrier height; biased conditions; multiquantum barrier lasers; semiconductor quantum well lasers; temperature dependence; temperature-threshold characteristic; Carrier confinement; DH-HEMTs; Gallium arsenide; Interference; Laser theory; Molecular beam epitaxial growth; Optical materials; Optical reflection; Temperature dependence; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
