Title :
Frequency stabilization of a GaAs semiconductor laser by use of the optical-optical double-resonance effect of the Doppler-free spectrum of Rb D/sub 1/ line
Author :
Suzuki, Masao ; Yamaguchi, Shizuo
Author_Institution :
Dept. of Electron. Eng., Tokyo Inst. of Polytech., Japan
Abstract :
The frequency of a GaAs semiconductor laser was locked to the hyperfine spectrum of the Rb D/sub 1/ line by saturation spectroscopy. A first GaAs laser was locked to one of the Doppler-free hyperfine lines using a source modulation method. The burnt hole modulated by the stabilized laser beam was detected by a second laser beam irradicated from the same or the opposite direction and was used as a frequency discriminator to stabilize the second laser. The characteristics of the double-resonance spectrum were measured. The frequency stability of the second laser, which was free from frequency modulation, was estimated to be on the order of 10/sup -9/.<>
Keywords :
III-V semiconductors; gallium arsenide; laser frequency stability; laser mode locking; optical double resonance; semiconductor junction lasers; D/sub 1/ line; Doppler-free spectrum; GaAs semiconductor laser; III-V semiconductor; Rb; frequency discriminator; frequency modulation; frequency stability; laser mode locking; optical-optical double-resonance effect; saturation spectroscopy; Atom optics; Frequency estimation; Gallium arsenide; Laser beams; Laser stability; Laser transitions; Optical distortion; Optical saturation; Power lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of