Title :
Low-threshold current low-voltage vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by MOCVD
Author :
Kawakami, T. ; Kadota, Y. ; Kohama, Y. ; Tadokoro, T.
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
Abstract :
InGaAs quantum-well vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by metalorganic chemical vapor deposition (MOCVD) have have been characterized. Series resistance in p-type Al/sub x/Ga/sub 1-x/As/GaAs mirrors decreases drastically as the Al content in Al/sub x/Ga/sub 1-x/As decreases from AlAs. Air-post devices with a p-type Al/sub 0.06/Ga/sub 0.4/As/GaAs top mirror exhibit a room temperature CW threshold current of 1.8 mA at an operating voltage of 2.0 V (with a threshold power consumption at 3.6 mW).<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; mirrors; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.8 mA; 2.0 V; 3.6 mW; AlGaAs-GaAs; InGaAs; MOCVD; air-post devices; laser accessories; laser cavity resonators; low-Al-content; low-voltage; metalorganic chemical vapor deposition; operating voltage; p-type mirrors; quantum-well vertical-cavity surface-emitting lasers; room temperature CW threshold current; series resistance; threshold power consumption; top mirror; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; MOCVD; Mirrors; Quantum well lasers; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
