DocumentCode
827587
Title
Dark-line-resistant, aluminum-free diode laser at 0.8 mu m
Author
Yellen, S.L. ; Shepard, A.H. ; Harding, C.M. ; Baumann, J.A. ; Waters, R.G. ; Garbuzov, D.Z. ; Pjataev, V. ; Kochergin, V. ; Zory, P.S.
Author_Institution
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
Volume
4
Issue
12
fYear
1992
Firstpage
1328
Lastpage
1330
Abstract
Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mu m are shown to exhibit resistance to
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor laser arrays; semiconductor lasers; 0.8 micron; Al-free diode laser; IR; InGaAsP lasers; QW lasers; dark-line resistant; device structure; diode laser arrays; electron beam induced current; high-power diodes; lattice-matched; life testing; quantum well lasers; semiconductors; Conducting materials; Diode lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Optical materials; Photonic band gap; Quantum well lasers; Semiconductor laser arrays; Substrates;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.180565
Filename
180565
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