Title :
Dark-line-resistant, aluminum-free diode laser at 0.8 mu m
Author :
Yellen, S.L. ; Shepard, A.H. ; Harding, C.M. ; Baumann, J.A. ; Waters, R.G. ; Garbuzov, D.Z. ; Pjataev, V. ; Kochergin, V. ; Zory, P.S.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
Abstract :
Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mu m are shown to exhibit resistance to
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor laser arrays; semiconductor lasers; 0.8 micron; Al-free diode laser; IR; InGaAsP lasers; QW lasers; dark-line resistant; device structure; diode laser arrays; electron beam induced current; high-power diodes; lattice-matched; life testing; quantum well lasers; semiconductors; Conducting materials; Diode lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Optical materials; Photonic band gap; Quantum well lasers; Semiconductor laser arrays; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
