Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors

A comprehensive modelling of the band-to-band tunnelling gate induced drain leakage (GIDL) current is conducted, based on exact WKB tunnel transparency calculations. The authors´ GIDL model explains reasonably well the asymmetrical variations of the GIDL current with gate and drain voltages. In particular, it makes it possible to obtain a quantitative description of the evolution of the logarithmic slope of the GIDL current against the reciprocal effective electric field with the gate and drain voltages