Title :
Design considerations for a multiple-quantum-well nonresonant surface-normal modulator
Author_Institution :
Dept. of Electr. Eng., California Univ., La Jolla, CA, USA
Abstract :
It is shown that by using optimal quantum-well thickness, and by using a symmetric back-to-back p-i-n structure, a non-Fabry-Perot surface-normal reflection modulator based on the quantum confined Stark effect in a GaAs/AlGaAs multiple-quantum-well (MQW) can provide intensity modulation with (a) at least 10-dB contrast ratio, (b) a drive voltage less than 10 V, and (c) an active-layer thickness less than 4 mu m. The drive voltage for a given contrast ratio can be minimized by using the quantum-well structure with the maximum Delta alpha /F.<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical modulation; semiconductor quantum wells; 10 V; 4 micron; GaAs-AlGaAs; MQW optical modulator design; active-layer thickness; contrast ratio; drive voltage; intensity modulation; multiple-quantum-well nonresonant surface-normal modulator; nonFabry-Perot modulator; optimal quantum-well thickness; quantum confined Stark effect; quantum-well structure; semiconductors; surface-normal reflection modulator; symmetric back-to-back p-i-n structure; Absorption; Chromium; Intensity modulation; Optical modulation; Optical reflection; Optical saturation; Optical sensors; Optical signal processing; Quantum well devices; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
