Design considerations for a multiple-quantum-well nonresonant surface-normal modulator

Author

Chin, M.K.

Author_Institution

Dept. of Electr. Eng., California Univ., La Jolla, CA, USA

Volume

4

Issue

12

fYear

1992

Firstpage

1357

Lastpage

1360

Abstract

It is shown that by using optimal quantum-well thickness, and by using a symmetric back-to-back p-i-n structure, a non-Fabry-Perot surface-normal reflection modulator based on the quantum confined Stark effect in a GaAs/AlGaAs multiple-quantum-well (MQW) can provide intensity modulation with (a) at least 10-dB contrast ratio, (b) a drive voltage less than 10 V, and (c) an active-layer thickness less than 4 mu m. The drive voltage for a given contrast ratio can be minimized by using the quantum-well structure with the maximum Delta alpha /F.<>

Keywords

III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical modulation; semiconductor quantum wells; 10 V; 4 micron; GaAs-AlGaAs; MQW optical modulator design; active-layer thickness; contrast ratio; drive voltage; intensity modulation; multiple-quantum-well nonresonant surface-normal modulator; nonFabry-Perot modulator; optimal quantum-well thickness; quantum confined Stark effect; quantum-well structure; semiconductors; surface-normal reflection modulator; symmetric back-to-back p-i-n structure; Absorption; Chromium; Intensity modulation; Optical modulation; Optical reflection; Optical saturation; Optical sensors; Optical signal processing; Quantum well devices; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.180575

Filename

180575