Title :
Monolithic integration of GaInAsP/InP carrier depletion directional couplers and GaInAs p-i-n detectors on semi-insulating InP
Author :
Renaud, M. ; Vinchant, J.F. ; Jarry, P. ; Bris, J. Le ; Provost, J.G. ; Cavaillès, J.A. ; Erman, M.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
Monolithic integration of two optical switches consisting in carrier depletion directional couplers based on GaInAsP/InP double heterostructure waveguides, with two GaInAs p-i-n detectors has been realized on semi-insulating InP. Packaged devices based on 2 mm coupling length directional couplers exhibit a switching voltage of -15 V and a 3 dB cutoff frequency of 1.3 GHz. Also, total fiber-to-fiber insertion loss of only 16 dB is achieved without any antireflection coating.<>
Keywords :
III-V semiconductors; directional couplers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical couplers; optical switches; optical waveguides; photodetectors; semiconductor switches; -15 V; 1.3 GHz; 16 dB; GaInAs; GaInAsP-InP; InP; carrier depletion directional couplers; coupling length; cutoff frequency; double heterostructure waveguides; monolithic integration; optical switches; p-i-n detectors; packaged devices; semi-insulating; semiconductors; switching voltage; total fiber-to-fiber insertion loss; Cutoff frequency; Directional couplers; Indium phosphide; Monolithic integrated circuits; Optical fiber couplers; Optical switches; Optical waveguides; PIN photodiodes; Packaging; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
