Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Author

Taiping Lu ; Ziguang Ma ; Chunhua Du ; Yutao Fang ; Fangsheng Chen ; Yang Jiang ; Lu Wang ; Haiqiang Jia ; Hong Chen

Author_Institution

Key Lab. for Renewable Energy, Inst. of Phys., Beijing, China

Volume

10

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

146

Lastpage

150

Abstract

Staircase electron blocking layer (EBL) is incorporated in InGaN-based blue light-emitting diodes to numerically investigate the efficiency droop mechanism by using the APSYS simulation software. It is found that gradually reducing aluminum (Al) composition in the growth direction of the AlGaN staircase EBL can improve light output power, lower current leakage, and efficiency droop. To the contrary, increasing the Al composition in the staircase EBL along the growth direction will aggravate the electron leakage and efficiency droop. These distinct features are attributed mainly to discrepancy energy band tailoring in the EBL region, and finally different electron blocking efficiency.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; leakage currents; light emitting diodes; semiconductor growth; wide band gap semiconductors; APSYS simulation software; AlGaN-InGaN; blue InGaN based LED performance; discrepancy energy band tailoring; efficiency droop mechanism; electron blocking efficiency; electron leakage; growth direction; light emitting diode; staircase EBL; staircase electron blocking layer effect; Aluminum gallium nitride; Charge carrier processes; Electric potential; Gallium nitride; Light emitting diodes; Power generation; Spontaneous emission; AlGaN; Light-emitting diodes (LEDs); efficiency droop; electron blocking layer (EBL);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2013.2289358

Filename

6656839