DocumentCode
827899
Title
Ion-implanted 0.4 μm wide 2-D MESFET for low power electronics
Author
Hurt, M.J. ; Peatman, W.C.B. ; Tsai, R. ; Ytterdal, T. ; Shur, M. ; Moon, B.J.
Author_Institution
Adv. Device Technol. Inc., Charlottesville, VA, USA
Volume
32
Issue
8
fYear
1996
fDate
4/11/1996 12:00:00 AM
Firstpage
772
Lastpage
773
Abstract
Two-dimensional (2-D) MESFETs with 0.4 μm channel widths have been fabricated on ion-implanted n-GaAs material. The 2-D MESFET uses sidewall Schottky contacts on either side of an Si-doped channel to laterally modulate the current. The peak drain current is 370 mA/mm and the peak transconductance is 295 mS/mm at room temperature. The narrow channel effect and channel length modulation have been reduced in this device
Keywords
Schottky barriers; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor device models; 0.4 micron; 295 mS/mm; 2D MESFETs; GaAs; GaAs:Si; Si doped channel; channel length modulation reduction; ion-implanted n-GaAs material; low power electronics; narrow channel effect reduction; sidewall Schottky contacts; two-dimensional MESFET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960477
Filename
491084
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