Title :
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
Author :
Yue-Min Lin ; Kun-Ping Lin ; Ting-Chi Lee ; Meng-Ying Li ; Chien-Ping Lee
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
An InAs-channel heterostructure field-effect transistor on GaAs substrates is presented. The conduction channel was formed by the InAs/AlAs0.16Sb0.84/AlSb quantum well. With the addition of the AlAs0.16Sb0.84 layer, holes that are generated by impact ionisation at high voltages are effectively confined in the InAs channel because of the large ΔEv in this type-I heterostructure. By suppressing the hole injection into and accumulation in the buffer layer, the feedback through the back gate is eliminated and excellent output characteristics were obtained. The fabricated devices had a threshold voltage of about -0.6 V with a channel mobility of 18 100 cm2/V-s and a sheet carrier density of 1.2 × 1012 cm-2.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; high electron mobility transistors; indium compounds; ionisation; quantum well devices; wide band gap semiconductors; GaAs; HFET; InAs-AlAs0.16Sb0.84-AlSb; back gate; buffer layer; channel heterostructure field-effect transistor; channel mobility; conduction channel; double barriers; hole injection suppression; impact ionisation; quantum well; sheet carrier density; threshold voltage; type-I heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.0629
