Title :
Room temperature visible (683-713 nm) all-AlGaAs vertical-cavity surface-emitting lasers (VCSELs)
Author :
Sale, T.E. ; Roberts, J.S. ; Woodhead, J. ; David, J.P.R. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
4/1/1996 12:00:00 AM
Abstract :
Visible emitting all-AlGaAs vertical-cavity surface-emitting lasers (VCSELs) have been produced by metal organic vapor phase epitaxy (MOVPE) using ultra-high purity source reagents. Lasing was obtained at wavelengths in the range 683-713 nm using four 45 /spl Aring/ Al/sub 0.18/Ga/sub 0.82/As quantum wells in the active region. At room temperature, a minimum threshold current density of 3.8 kA.cm/sup -2/ was measured for a wavelength of 692 nm; this is the lowest value for an all-AlGaAs vertical-cavity laser operating at this wavelength. Growth of the epitaxial mirrors at 5.2 μm/h/sup -1/ results in a total growth time of only two and a half hours.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 45 A; 683 to 713 nm; 692 nm; Al/sub 0.18/Ga/sub 0.82/As quantum wells; AlGaAs; MOVPE; VCSELs; active region; epitaxial mirrors; metal organic vapor phase epitaxy; minimum threshold current density; room temperature; room temperature visible all-AlGaAs vertical-cavity surface-emitting lasers; semiconductor growth; total growth time; ultra-high purity source reagents; visible emitting; Current measurement; Density measurement; Epitaxial growth; Epitaxial layers; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
