A 6-21-GHz monolithic HEMT 2×3 matrix distributed amplifier

Author

Kobayashi, K.W. ; Esfandiari, R. ; Jones, W.L. ; Minot, K. ; Allen, B.R. ; Freudenthal, A. ; Streit, D.C.

Author_Institution

TRW, Redondo Beach, CA, USA

Volume

3

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

11

Lastpage

13

Abstract

The results of the first monolithic matrix distributed amplifier fabricated using pseudomorphic high-electron-mobility transistor (HEMT) technology are reported. The HEMT matrix amplifier obtains a combination of high gain, wide bandwidth, and reasonable IP3 and noise figure. The best gain response is 20 dB from 6 to 21 GHz. The noise figure is 5.5 dB and the third-order intercept point is 21 dBm. In comparison to GaAs HBT and MESFET technologies, the HEMT matrix distributed amplifier shows the best promise for wideband millimeter-wave applications

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; wideband amplifiers; 20 dB; 5.5 dB; 6 to 21 GHz; HEMT matrix amplifier; MMIC; SHF; matrix distributed amplifier; monolithic microwave IC; pseudomorphic high-electron-mobility transistor; wideband; Bandwidth; Distributed amplifiers; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MESFETs; Millimeter wave technology; Millimeter wave transistors; Noise figure; PHEMTs;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.180675

Filename

180675