Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

Author

Yu, Kuo-Hui ; Chuang, Hung-Ming ; Lin, Kun-Wei ; Cheng, Shiou-Ying ; Cheng, Chin-Chuan ; Chen, Jing-Yuh ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

49

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1687

Lastpage

1693

Abstract

A new InGaP-InGaAs-GaAs double channel pseudomorphic high-electron mobility transistor (DC-PHEMT) has been fabricated successfully. The detailed temperature-dependent performance is investigated. The key features of the studied device are the use of an InGaAs DC structure, triple δ-doped carrier supplier layers and good Schottky behavior of the InGaP "insulator". For a 1-μm gate length device, the turn-on voltage of 1.46 (1.16) V, gate leakage current of 60 [600] μA/mm at V_GD = 15 V, maximum extrinsic transconductance of 162 [145] mS/mm with 310 [260] mA/mm broad operation regime (> 0.9g_m,max), output conductance of 0.41 (0.43) mS/mm, and voltage gain of 390 [335] are obtained at T = 300 [480] K, respectively. In addition, good microwave performance with a flat and wide operation regime is obtained.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; high-temperature electronics; indium compounds; leakage currents; microwave field effect transistors; semiconductor device measurement; 1.16 to 1.46 V; 145 to 162 mS/mm; 300 to 480 K; InGaAs DC structure; InGaP insulator; InGaP-InGaAs-GaAs; InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor; Schottky behavior; broad operation regime; flat wide operation regime; gate leakage current; maximum extrinsic transconductance; microwave performance; output conductance; temperature-dependent performance; triple δ-doped carrier supplier layers; turn-on voltage; voltage gain; Breakdown voltage; Electron mobility; FETs; HEMTs; Indium gallium arsenide; Leakage current; Linearity; MODFETs; PHEMTs; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.803628

Filename

1036074