Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

A new InGaP-InGaAs-GaAs double channel pseudomorphic high-electron mobility transistor (DC-PHEMT) has been fabricated successfully. The detailed temperature-dependent performance is investigated. The key features of the studied device are the use of an InGaAs DC structure, triple δ-doped carrier supplier layers and good Schottky behavior of the InGaP "insulator". For a 1-μm gate length device, the turn-on voltage of 1.46 (1.16) V, gate leakage current of 60 [600] μA/mm at V_GD = 15 V, maximum extrinsic transconductance of 162 [145] mS/mm with 310 [260] mA/mm broad operation regime (> 0.9g_m,max), output conductance of 0.41 (0.43) mS/mm, and voltage gain of 390 [335] are obtained at T = 300 [480] K, respectively. In addition, good microwave performance with a flat and wide operation regime is obtained.