Title :
Equivalent circuit model for a THz detector based on the double-electron layer tunneling transistor (DELTT)
Author :
Khodier, Majid M. ; Christodoulou, Christos G. ; Simmons, Jerry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
fDate :
10/1/2002 12:00:00 AM
Abstract :
An equivalent circuit model for the double-electron layer tunneling transistor (DELTT) integrated with an antenna is presented in this paper. This device is used basically for THz detection, and the antenna is used to efficiently couple THz radiation into the device for processing. Developing an equivalent circuit model is extremely helpful in matching the antenna to the device.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; impedance matching; quantum well devices; resonant tunnelling transistors; semiconductor device models; submillimetre wave detectors; submillimetre wave transistors; Al0.3Ga0.7As-GaAs; Al0.3Ga0.7As/GaAs material system; THz radiation coupling; antenna integration; antenna matching; double-electron layer tunneling transistor based THz detector; equivalent circuit model; modulation-doped DQW heterostructure; quantum tunneling transistor; Broadband antennas; Contacts; Coupling circuits; Electrons; Equivalent circuits; Frequency; Impedance; Radiation detectors; Resonant tunneling devices; Transmission line theory;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.803641
