Equivalent circuit model for a THz detector based on the double-electron layer tunneling transistor (DELTT)

Author

Khodier, Majid M. ; Christodoulou, Christos G. ; Simmons, Jerry A.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA

Volume

49

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1701

Lastpage

1708

Abstract

An equivalent circuit model for the double-electron layer tunneling transistor (DELTT) integrated with an antenna is presented in this paper. This device is used basically for THz detection, and the antenna is used to efficiently couple THz radiation into the device for processing. Developing an equivalent circuit model is extremely helpful in matching the antenna to the device.

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; impedance matching; quantum well devices; resonant tunnelling transistors; semiconductor device models; submillimetre wave detectors; submillimetre wave transistors; Al_0.3Ga_0.7As-GaAs; Al_0.3Ga_0.7As/GaAs material system; THz radiation coupling; antenna integration; antenna matching; double-electron layer tunneling transistor based THz detector; equivalent circuit model; modulation-doped DQW heterostructure; quantum tunneling transistor; Broadband antennas; Contacts; Coupling circuits; Electrons; Equivalent circuits; Frequency; Impedance; Radiation detectors; Resonant tunneling devices; Transmission line theory;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.803641

Filename

1036076