Design and fabrication of highly efficient GaN-based light-emitting diodes

A promising fabrication method and an innovative geometrical design for highly efficient GaN-based light-emitting diodes (LEDs) were investigated based on the current spreading phenomenon. Based on theoretical considerations, it was possible to determine the critical transparent-electrode thickness, which resulted in significant improvements in the electrical and optical characteristics of LEDs. In addition, we were able to define conditions for an ideal geometrical design and the resulting product exhibited significant improvements in characteristics in spite of the fact that a transparent electrode, acting as a p-type current spreader, was not used. Considering the simple fabrication process and good device performance, the proposed fabrication methods, as well as the innovative geometrical design, have considerable promise for use in practical applications.