Title :
Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers
Author :
Smith, G.M. ; Hughes, J.S. ; Lammert, R.M. ; Osowski, M.L. ; Papen, G.C. ; Verdeyen, J.T. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral linewidth as low as 39 kHz for an output power of 24 mW. The fabrication requires only a single standard epitaxial growth of a laser structure while the use of a thin top cladding layer allows for a shallow reactive ion etch of the distributed Bragg reflector. These RW-DBR lasers have a threshold current of 12.4 mA, a slope of 0.3 W/A, and over 40 dB side-mode suppression at a wavelength of 1010 nm.
Keywords :
III-V semiconductors; claddings; epitaxial growth; gallium arsenide; indium compounds; laser modes; ridge waveguides; semiconductor growth; semiconductor lasers; spectral line breadth; sputter etching; waveguide lasers; 1010 nm; 12.4 mA; IR sources; InGaAs-GaAs; InGaAs-GaAs ridge waveguide DBR lasers; RW-DBR lasers; laser structure; output power; shallow reactive ion etch; side-mode suppression; single standard epitaxial growth; spectral linewidth; thin top cladding layer; threshold current; very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers; Chemical lasers; Distributed Bragg reflectors; Etching; Fiber lasers; Gallium arsenide; Laser modes; Laser tuning; Power lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
