DocumentCode
828321
Title
AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering
Author
Furuya, Akira ; Makiuchi, Masao ; Wada, Osamu ; Fuji, Toshio
Author_Institution
Fujitsu Lab., Ltd., Atsugi, Japan
Volume
24
Issue
12
fYear
1988
Firstpage
2448
Lastpage
2453
Abstract
A lateral current injection (LCI) multiquantum-well (MQW) laser having planar structure is proposed and its advantages compared with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It is shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF is obtained at zero bias voltage.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical workshop techniques; semiconductor junction lasers; 0.27 pF; 27 mA; III-V semiconductors; LCI-MQW; bias voltage; capacitance; impurity-induced disordering; lateral current injection multiquantum well; Gallium arsenide; Impurities; Optical device fabrication; Optical signal processing; Quantum well devices; Quantum well lasers; Semiconductor laser arrays; Semiconductor lasers; Substrates; Surface emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.14375
Filename
14375
Link To Document