Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation

Author

Ueno, Hioraki ; Kitamaru, Daisuke ; Morikawa, Keiichi ; Tanaka, Masayasu ; Miura-Mattausch, Mitiko ; Mattausch, Hans Juergen ; Kumashiro, Shigetaka ; Yamaguchi, Tetsuya ; Yamashita, Kyoji ; Nakayama, Noriaki

Author_Institution

Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan

Volume

49

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1783

Lastpage

1789

Abstract

A new threshold voltage (V_th) model has been developed for the pocket-implant technology. The model extracts the threshold condition from the entire mobile charge concentration in the channel with only five additional parameters; the maximum doping concentration (N_subp) of the pocket profile, the penetration length (L_p) into the channel, and three enhanced short-channel parameters. The model reproduces the measured V_th versus. gate-length (L_gate) characteristics with an average error of a few millivolts under any bias conditions.

Keywords

MOSFET; carrier density; circuit simulation; doping profiles; ion implantation; semiconductor device models; surface potential; bias conditions; circuit simulation; enhanced short-channel parameters; impurity-profile-based threshold-voltage model; maximum doping concentration; mobile charge concentration; penetration length; pocket-implanted MOSFETs; reverse-short-channel effect; sheet carrier concentrations; surface potential distribution; threshold condition; Circuit simulation; Doping profiles; Helium; Impurities; MOSFETs; Medical simulation; Region 1; Semiconductor process modeling; Threshold voltage; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.803633

Filename

1036088