Wide-temperature-range operation of 1.3-μm beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask

Author

Aoki, M. ; Komori, M. ; Suzuki, M. ; Sato, H. ; Takahashi, Masaharu ; Ohtoshi, T. ; Uomi, K. ; Tsuji, S.

Author_Institution

Central Res. Labs., Hitachi Ltd., Tokyo, Japan

Volume

8

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

479

Lastpage

481

Abstract

A new fabrication method of high-quality thickness-tapered semiconductor waveguides is proposed based on controlling in-plane thickness during MOVPE by using a comb-shaped silicon shadow mask. It was used to fabricate a 1.3-μm-wavelength narrow-beam (less than 13/spl deg/) InGaAsP-InP laser diode, which achieved high-power (over 20 mW) operation up to 85.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; 1.3-/spl mu/m beam expander-integrated laser diodes; 20 mW; InGaAsP-InP; InGaAsP-InP laser diode; comb-shaped silicon shadow mask; fabrication method; high-power; high-quality thickness-tapered semiconductor waveguides; in-plane thickness control; in-plane thickness control MOVPE; silicon shadow mask; wide-temperature-range operation; Diode lasers; Epitaxial growth; Epitaxial layers; Fiber lasers; Laser beams; Laser modes; Quantum well devices; Silicon; Substrates; Thickness control;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.491089

Filename

491089