Title :
Wide-temperature-range operation of 1.3-μm beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask
Author :
Aoki, M. ; Komori, M. ; Suzuki, M. ; Sato, H. ; Takahashi, Masaharu ; Ohtoshi, T. ; Uomi, K. ; Tsuji, S.
Author_Institution :
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
fDate :
4/1/1996 12:00:00 AM
Abstract :
A new fabrication method of high-quality thickness-tapered semiconductor waveguides is proposed based on controlling in-plane thickness during MOVPE by using a comb-shaped silicon shadow mask. It was used to fabricate a 1.3-μm-wavelength narrow-beam (less than 13/spl deg/) InGaAsP-InP laser diode, which achieved high-power (over 20 mW) operation up to 85.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; 1.3-/spl mu/m beam expander-integrated laser diodes; 20 mW; InGaAsP-InP; InGaAsP-InP laser diode; comb-shaped silicon shadow mask; fabrication method; high-power; high-quality thickness-tapered semiconductor waveguides; in-plane thickness control; in-plane thickness control MOVPE; silicon shadow mask; wide-temperature-range operation; Diode lasers; Epitaxial growth; Epitaxial layers; Fiber lasers; Laser beams; Laser modes; Quantum well devices; Silicon; Substrates; Thickness control;
Journal_Title :
Photonics Technology Letters, IEEE
