Title :
High-power superluminescent diodes
Author :
Alphonse, Gerard A. ; Gilbert, Dean B. ; Harvey, M.G. ; Ettenberg, Michael
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
By inclining the active stripe of a planar AlGaAs double heterojunction structure by 5 degrees with respect to the facets, reflection feedback has been eliminated and high-power superluminescent diodes emitting 28 mW with less than 5% spectral modulation have been obtained.<>
Keywords :
III-V semiconductors; aluminium compounds; feedback; gallium arsenide; light reflection; semiconductor junction lasers; 28 mW; AlGaAs; III-V semiconductors; double heterojunction structure; reflection feedback; spectral modulation; superluminescent diodes; Gyroscopes; Laser feedback; Optical feedback; Optical receivers; Optical reflection; Power generation; Power lasers; Pump lasers; Spontaneous emission; Superluminescent diodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
