DocumentCode
828358
Title
High-power superluminescent diodes
Author
Alphonse, Gerard A. ; Gilbert, Dean B. ; Harvey, M.G. ; Ettenberg, Michael
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
Volume
24
Issue
12
fYear
1988
Firstpage
2454
Lastpage
2457
Abstract
By inclining the active stripe of a planar AlGaAs double heterojunction structure by 5 degrees with respect to the facets, reflection feedback has been eliminated and high-power superluminescent diodes emitting 28 mW with less than 5% spectral modulation have been obtained.<>
Keywords
III-V semiconductors; aluminium compounds; feedback; gallium arsenide; light reflection; semiconductor junction lasers; 28 mW; AlGaAs; III-V semiconductors; double heterojunction structure; reflection feedback; spectral modulation; superluminescent diodes; Gyroscopes; Laser feedback; Optical feedback; Optical receivers; Optical reflection; Power generation; Power lasers; Pump lasers; Spontaneous emission; Superluminescent diodes;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.14376
Filename
14376
Link To Document