A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

Author

Liang, Qingqing ; Cressler, John D. ; Niu, Guofu ; Malladi, Ramana M. ; Newton, Kim ; Harame, David L.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

Volume

49

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1807

Lastpage

1813

Abstract

A physics-based cutoff frequency model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. Compared with other compact modeling approaches, the present model accurately captures the cutoff frequency behavior at very high current densities for SiGe HBTs with deep Si-SiGe heterojunctions. The model also offers better insight into the charge density distribution under Kirk and barrier effect in SiGe HBTs.

Keywords

Ge-Si alloys; carrier density; charge injection; current density; electron mobility; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; 2-D simulation; Kirk effect; MEDICI simulation; Si-SiGe; SiGe HBTs; barrier effects; carrier density; charge density distribution; cutoff frequency behavior; deep Si-SiGe heterojunctions; electron mobility; high breakdown SiGe HBTs; high-current model; high-injection heterojunction barrier effects; physics-based cutoff frequency model; physics-based high-injection transit-time model; very high current densities; Circuit simulation; Context modeling; Current density; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Microelectronics; Radio frequency; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.803631

Filename

1036091