Title :
A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs
Author :
Liang, Qingqing ; Cressler, John D. ; Niu, Guofu ; Malladi, Ramana M. ; Newton, Kim ; Harame, David L.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fDate :
10/1/2002 12:00:00 AM
Abstract :
A physics-based cutoff frequency model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. Compared with other compact modeling approaches, the present model accurately captures the cutoff frequency behavior at very high current densities for SiGe HBTs with deep Si-SiGe heterojunctions. The model also offers better insight into the charge density distribution under Kirk and barrier effect in SiGe HBTs.
Keywords :
Ge-Si alloys; carrier density; charge injection; current density; electron mobility; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; 2-D simulation; Kirk effect; MEDICI simulation; Si-SiGe; SiGe HBTs; barrier effects; carrier density; charge density distribution; cutoff frequency behavior; deep Si-SiGe heterojunctions; electron mobility; high breakdown SiGe HBTs; high-current model; high-injection heterojunction barrier effects; physics-based cutoff frequency model; physics-based high-injection transit-time model; very high current densities; Circuit simulation; Context modeling; Current density; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Microelectronics; Radio frequency; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.803631
